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| STS20NHS3LL Table 3: Absolute Maximum ratings Symbol VDS VGS ID(1) ID IDM(2) Ptot Gate- source Voltage Drain Current (continuous) at TC = 25C Drain Current (continuous) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Parameter Drain-source Voltage (VGS = 0) Value 30 18 20 12.6 80 2.7 Unit V V A A A W Table 4: Thermal Data Rthj-amb (3) Thermal Resistance Junction-ambient Max Tj Maximum Operating Junction Temperature Tstg Storage Temperature 47 -55 to 150 -55 to 150 C/W C C Table 5: Avalanche Characteristics Symbol IAV EAS Parameter Not-Repetitive Avalanche Current (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25C, ID = IAV, VDD = 24V) Max Value 12.5 1.3 Unit A J ELECTRICAL CHARACTERISTICS (TJ =25C UNLESS OTHERWISE SPECIFIED) Table 6: On /Off Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Gate Threshold Voltage Static Drain-source On Resistance Test Conditions ID = 1mA, VGS = 0 VDS = 24V VGS = 18V VDS = VGS, ID = 1mA VGS = 10V, ID = 10A VGS = 4.5V, ID = 10A 1 0.0032 0.004 Min. 30 500 100 2.5 0.004 0.0055 Typ. Max. Unit V A nA V Table 7: Dynamic Symbol gfs (4) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS=15V, ID = 12A VDS = 25V, f = 1MHz, VGS = 0 Min. Typ. 30 3950 720 70 Max. Unit S pF pF pF 2/9 STS20NHS3LL ELECTRICAL CHARACTERISTICS (CONTINUED) Table 8: Switching On Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 15V, ID = 10A RG = 4.7 , VGS = 4.5V (see Figure 15) VDD=15V, ID=20A VGS= 4.5V (see Figure 17) Min. Typ. TBD TBD 27.5 7.9 8.7 37 Max. Unit ns ns nC nC nC Table 9: Switching Off Symbol td(off) tf Parameter Turn-off Delay Time Fall Time Test Conditions VDD = 15V, ID = 10A RG= 4.7 , VGS = 4.5V (see Figure 15) Min. Typ. TBD TBD Max. Unit ns ns Table 10: Source Drain Diode Symbol ISD ISDM VSD (4) trr Qrr IRRM Notes: 1. 2. 3. 4. This value is rated according to Rthj-pcb Pulse width limited by safe operating area When mounted on FR-4 board with 1 inch2 pad, 2 oz of Cu and t < 10sec Pulsed: pulse duration = 300s, duty cycle 1.5% Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Test Conditions Min. Typ. Max. 20 80 Unit A A V ns nC A ISD = 10A ,VGS = 0 ISD = 10A, di/dt = 100A/s VDD = 25V, Tj = 150C (see Figure 16) 0.7 26 25 1.9 3/9 STS20NHS3LL Figure 3: Safe Operating Area Figure 6: Thermal Impedance Figure 4: Output Characteristics Figure 7: Transfer Characteristics Figure 5: Transconductance Figure 8: Static Drain-source On Resistance 4/9 STS20NHS3LL Figure 9: Gate Charge vs Gate-source Voltage Figure 12: Capacitance Variations Figure 10: Normalized Gate Thereshold Voltage vs Temperature Figure 13: Normalized BVDSS vs Temperature Figure 11: Normalized On Resistance vs Temperature Figure 14: Source-Drain Diode Forward Characteristics 5/9 STS20NHS3LL Figure 15: Switching Times Test Circuit For Resistive Load Figure 17: Gate Charge Test Circuit Figure 16: Test Circuit For Diode Recovery Times 6/9 STS20NHS3LL SO-8 MECHANICAL DATA DIM. A a1 a2 a3 b b1 C c1 D E e e3 F L M S 3.8 0.4 4.8 5.8 1.27 3.81 4.0 1.27 0.6 8 (max.) 0.14 0.015 5.0 6.2 0.65 0.35 0.19 0.25 0.1 mm. MIN. TYP MAX. 1.75 0.25 1.65 0.85 0.48 0.25 0.5 45 (typ.) 0.188 0.228 0.050 0.150 0.157 0.050 0.023 0.196 0.244 0.025 0.013 0.007 0.010 0.003 MIN. inch TYP. MAX. 0.068 0.009 0.064 0.033 0.018 0.010 0.019 7/9 STS20NHS3LL Table 11: Revision History Date 24-May-2005 19-Dec-2005 Revision 1 2 First release Inserted curves Description of Changes 8/9 STS20NHS3LL Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners (c) 2005 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 9/9 |
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